ASTeX Large Volume Plasma Processing System (ECR-PECVD-MPCVD-MOCVD)
High density plasma system activated by ECR-enhanced, 2.45GHz microwave input offers PECVD-MOCVD deposition, functionalization, and/or dry etching of ceramics, diamond & related carbon materials, and nanomaterials at relatively low substrate temperatures.
Computer-Controlled, low pressure, high power-density, microwave plasma system equipped with a large 28-inch dia X 51-inch long cylindrical SS chamber with full-diameter doors on each end and many ISO 150 & 250 flanges. Two Astex 2.5kW to 5KW microwave generators are used to power two permanent-magnet high-power ECR (Electron Cyclotron Resonance) sources. A planetary motion feedthrough is mounted on the top of the chamber and is equipped with RF-bias functionality (if needed) and planetary fixturing. Flexible system design is currently configured for simultaneous, high-rate, PECVD-MOCVD deposition of ceramic oxides onto many 3-D parts using gas, vapor and liquid reactants and no external heating.
Potential future uses range from large area (or large volume) PECVD (or plasma MOCVD) deposition of ceramics, semiconductors, DLC, nanodiamond, nanomaterials as well as surface treatment, functionalization and/or dry plasma etching.
This is a flexible R&D or semi-production system that was originally installed in the 1999 timeframe and used for high deposition-rate oxide PECVD/MOCVD research for less than 3-½ years. Most, if not all, of the research was focused on silicon oxide studies with rates measured in the micron/minute range using up to 10KW (2 X 5KW) of microwave power input enhanced with two ECR magnets.
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