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ASTeX Large Volume Plasma Processing System (ECR-PECVD-MPCVD-MOCVD)
High density plasma system activated by 2.45GHz ECR microwave offers low temperature plasma for PECVD-MOCVD deposition, functionalization, and/or dry etching of ceramics, diamond & related carbon materials, and nanomaterials.
Computer-Controlled, low pressure, high power-density, microwave plasma system equipped with a large 28-inch dia X 51-inch long cylindrical SS chamber with full-diameter doors on each end and many ISO 150 & 250 flanges. Two Astex 2.5kW to 5KW microwave generators are used to power two permanent-magnet high-power ECR (Electron Cyclotron Resonance) sources. A planetary motion feedthrough is mounted on the top of the chamber and is equipped with RF-bias functionality (if needed) and planetary fixturing. Flexible system design is currently configured for simultaneous, high-rate, PECVD-MOCVD deposition of ceramic oxides onto many 3-D parts using gas, vapor and liquid reactants and no external heating.
Potential future uses range from large area/volume MOCVD/PECVD/deposition of ceramics/semiconductors/DLC/nanodiamond/nanomaterials, surface treatment & functionalization and/or dry etching.
This is a flexible R&D or semi-production system that was originally installed in the 1999 timeframe and used for high deposition-rate oxide PECVD/MOCVD research for less than 3-½ years. Most, if not all, of the research was focused on silicon oxide studies with rates measured in the micron/minute range using up to 10KW (2 X 5KW) of microwave power input enhanced with two ECR magnets.
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